27. June 2024
In his recent IEEE TED article “On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment“, GTS Senior Scientist Mischa Thesberg outlines the key aspects and features of a microscopic, fully physical, fully 3D TCAD model for amorphous indium gallium zinc oxide (a-IGZO) devices.
Amorphous IGZO is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire system. Thus, transport is envisioned as being dominated by percolation physics as carriers traverse this varying band-edge landscape of “hills” and “valleys”. With his team, Mischa created a true microscopic TCAD model with a real physically varying potential – including the effect of exponential band-tails of trapped carriers – and demonstrated that it can accurately reproduce experimental results as well as conducted two studies of 3D effects to prove the great utility of such a TCAD model.
Open Access Paper
We have chosen to make the paper available through Open Access because we feel it’s important to support the free exchange of ideas. The paper is available at https://doi.org/10.3390/mi15070829 – or you can download the paper at MyGTS.
Read more about dealing with new materials and explore our application examples. Feel free to contact us directly for specific enquiries.
All covered in GTS Framework
GTS Framework includes this new IGZO model and a specialized Application Example can be used to understand how the model is used and configured.
A 3D diagram of the device simulated showing the spatially varying band-edge of the a-IGZO film.