15. September 2022

GTS CTO Zlatan Stanojević is presenting a novel semi-analytical model for wave-function penetration in MOSFETs, resolving long-standing problems such as carrier spillover and large errors in surface roughness scattering.

A Novel Approach to Modeling Insulator Wave-Function Penetration and Interface Roughness Scattering in MOSFETs

In the paper, Zlatan presents a novel model that allows to consider wave-function penetration into the insulating barrier of MOSFET devices. His analytical penetration model addresses all problems that would emerge when simply including the insulator in the Schrödinger equation, thus providing these advantages:

  • No carrier spillover at high inversion or accumulation biases
  • Numerically robust wave-function values and their first derivatives at semiconductor/insulator interface and thus stable surface roughness matrix element and mobility
  • No mesh density requirements in the insulating barrier, and no additional computational cost with respect to simulations without penetration
Plot: E,V - Potential and wave function
Closed boundary solution of the Schrödinger equation for a carrier near an insulating barrier, incl. the analytical extension of the wave-function into the insulator

Surface Roughness, Numerically Robust

Zlatan further derives an alternative formulation of the surface roughness matrix element that does not require spatial derivatives of the wave-functions and is thus more numerically robust than its textbook counterpart.

The analytical and numerical penetrations converge to the same energies, densities, ψ-values, and roughness-limited mobilities; mobility parameters calibrated without wave-function penetration can be easily recalibrated for the analytical penetration model.

Application: N3+ GAA Devices

Device cross-section of N3+ GAA NMOS

Zlatan’s approach is especially apt for highly scaled MOSFET channels and high-barrier dielectrics (such as SiO₂); in his presentation, he discusses applications for N3+ GAA devices.

C/V-curves of a MOSCAP, showing identical capacitance between analytical and numerical penetration as well as carrier spillover in the latter
Density profile of a MOSFET in inversion for no / analytical / numerical penetration
Mobility and electron density in N3+ GAA NMOS device
VG-ID chracteristics of N3+ GAA NMOS, analytical vs. numerical model

Paper / Advanced CMOS Modeling Session

Paper:ID 6044, topic 3 (presentation 3/3)
Session Type: Lecture
Session Code: A9L-6
Location: Aula 1d
Date & Time: Tuesday September 20, 2022, 17:30 – 18:30 CEST
Chair: Benjamin Iniguez, Viktor Sverdlov

ESSDERC/ESSCIRC 2022 session schedule

Update: The paper is available for download here via MyGTS login.

Sensors Device Modeling

Zlatan is also co-chairing the Sensors Device Modeling session:

Sensors Device Modeling Session

Session Type: Lecture
Session Code: B2L-5
Location: Aula 1f
Date & Time: Wednesday September 21, 2022, 09:20 – 10:40 CEST
Chair: Denis Rideau, Zlatan Stanojević

ESSDERC/ESSCIRC 2022 session schedule

Mentoring Event

Zlatan is acting as a mentor in the Young Professionals and Women in Engineering Mentoring Event:

Young Professionals and Women in Engineering Mentoring Event
Date & Time: Tuesday, September 20th, 2022, 13:00 – 14:20 CEST
Location: Aula 10

ESSDERC/ESSCIRC 2022 Mentoring Event page

<< All news (overview) GTS in the news Contact GTS